The conditions for the appearance and the spectrum of localised electron states are reviewed for various inhomogeneous structures made of narrow-gap semiconductors with mutually inverted energy bands. The methods of supersymmetry and factorisation are used to solve Dirac-type equations with inhomogeneous external potentials in one-dimensional, two-dimensional, and three-dimensional systems.

PACS: 73.20.Dx, 73.40.Lq, 71.28.+d (all) DOI: 10.1070/PU1995v038n07ABEH000097 URL: https://ufn.ru/en/articles/1995/7/e/ A1995RU84500004 Citation: Volkov B A, Idlis B G, Usmanov M Sh "Interface states in inhomogeneous semiconductor structures" Phys. Usp. 38 761–771 (1995) BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks PT Journal Article TI Interface states in inhomogeneous semiconductor structures AU Volkov B A FAU Volkov BA AU Idlis B G FAU Idlis BG AU Usmanov M Sh FAU Usmanov MS DP 10 Jul, 1995 TA Phys. Usp. VI 38 IP 7 PG 761-771 RX 10.1070/PU1995v038n07ABEH000097 URL https://ufn.ru/en/articles/1995/7/e/ SO Phys. Usp. 1995 Jul 10;38(7):761-771 Оригинал: Волков Б А, Идлис Б Г, Усманов М Ш «Приграничные состояния в неоднородных полупроводниковых структурах» УФН 165 799–810 (1995); DOI: 10.3367/UFNr.0165.199507e.0799