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The electronic energy spectrum of zero-gap semiconductors

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CONTENTS
1. Introduction 879
2. Structure of the Energy Bands of Gapless Semiconductors 880
3. Experimental Data that Confirm the Inverted Band Structure of Gapless Semiconductors 881
4. The Energy Spectrum near the Center of the Brillouin Zone as Based on the Hamiltonian of Luttinger 882
5. Peculiarities of Gapless Semiconductors 884
6. Impurity States in Gapless Semiconductors 887
7. Statistics of Carriers in Gapless Semiconductors 890
8. Conclusion 892
Bibliography 892

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Fulltext is also available at DOI: 10.1070/PU1976v019n11ABEH005348
PACS: 71.30.Mw
DOI: 10.1070/PU1976v019n11ABEH005348
URL: https://ufn.ru/en/articles/1976/11/a/
Citation: Gel’mont B L, Ivanov-Omskii V I, Tsidil’kovskii I M "The electronic energy spectrum of zero-gap semiconductors" Sov. Phys. Usp. 19 879–893 (1976)
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Оригинал: Гельмонт Б Л, Иванов-Омский В И, Цидильковский И М «Электронный энергетический спектр бесщелевых полупроводников» УФН 120 337–362 (1976); DOI: 10.3367/UFNr.0120.197611a.0337

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